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1

On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current–voltage–temperature (I–V–T) characteristics

Büyükbaş Uluşan, A., Tataroğlu, A., Azizian-Kalandaragh, Y., Altındal, Ş.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2017

Language:

english

File:

PDF, 1.39 MB

english, 2017

2

Electrical and impedance properties of MPS structure based on (Cu2O–CuO–PVA) interfacial layer

Buyukbas-Uluşan, A., Yerişkin, S. Altındal, Tataroğlu, A., Balbaşı, M., Kalandaragh, Y. Azizian

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2018

Language:

english

File:

PDF, 1.63 MB

english, 2018

3

Frequency-Dependent Dielectric Parameters of Au/TiO2/n-Si (MIS) Structure

Uluşan, A. Büyükbaş, Tataroğlu, A.

Journal:

Year:

2018

Language:

english

File:

PDF, 1.54 MB

english, 2018

4

Analysis of interface states in Au/ZnO/p-InP (MOS) structure

Acar, F. Z., Buyukbas-Ulusan, A., Tataroglu, A.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2018

Language:

english

File:

PDF, 3.30 MB

english, 2018

5

Analysis of barrier inhomogeneities in AuGe/n-Ge Schottky diode

Buyukbas Ulusan, A, Tataroglu, A

Journal:

Indian Journal of Physics

Year:

2018

Language:

english

File:

PDF, 855 KB

english, 2018

6

Forward and reverse bias current–voltage (I–V) characteristics in the metal–ferroelectric–semiconductor (Au/SrTiO3/n-Si) structures at room temperature

Buyukbas-Ulusan, A., Altındal-Yerişkin, S., Tataroğlu, A.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2018

Language:

english

File:

PDF, 1.54 MB

english, 2018

7

Double-exponential current–voltage (I–V) and negative capacitance (NC) behavior of Al/(CdSe-PVA)/p-Si/Al (MPS) structure

Büyükbaş-Uluşan, A., Tataroğlu, A., Azizian-Kalandaragh, Y., Koşal, M.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2019

Language:

english

File:

PDF, 1.77 MB

english, 2019

8

Double-exponential current–voltage (I–V) and negative capacitance (NC) behavior of Al/(CdSe-PVA)/p-Si/Al (MPS) structure

Büyükbaş-Uluşan, A., Tataroğlu, A., Azizian-Kalandaragh, Y., Koşal, M.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2019

File:

PDF, 1.77 MB

2019

9

A comparative study on the electrical and dielectric properties of Al/Cd-doped ZnO/p-Si structures

Buyukbas-Ulusan, A., Taşçıoğlu, İ., Tataroğlu, A., Yakuphanoğlu, F., Altındal, S.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2019

Language:

english

File:

PDF, 1.58 MB

english, 2019

10

Electrical characterization of silicon nitride interlayer-based MIS diode

Buyukbas-Ulusan, A., Tataroglu, A.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2020

File:

PDF, 1.07 MB

2020

11

AÂ CompareÂ Study on Electrical Properties of MS Diodes with and Without CoFe2O4-PVP Interlayer

Tataroglu, A., Buyukbas Ulusan, A., AltÄ±ndal, Å., Azizian-Kalandaragh, Y.

Journal:

Journal of Inorganic and Organometallic Polymers and Materials

Year:

2020

File:

PDF, 1.47 MB

2020

12

Ionizing radiation effects on Au/TiO2/n-Si metalâinsulator-semiconductor (MIS) structure

Ertugrul-Uyar, R., Buyukbas-Ulusan, A., Tataroglu, A.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2020

File:

PDF, 800 KB

2020